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Lượt truy cập

011507
Số khách trực tuyến 17

1- Development of quantum device simulator, Dinh Sy Hien, Thi Tran Anh Tuan, Tran Tien Phuc, Pham Thanh Trung, Nguyen Thi Luong, , NEMO-VN1, Journal of Physics, 187, 2009, 012088.

2- Modeling of planar carbon nanotube field effect transistor and three dimensional simulations of current-voltage characteristics, Dinh Sy Hien, Thi Tran Anh Tuan, Nguyen Thi Luong, Dinh Viet Nga, Journal of Physics. Conference Series, UK, 187, (2009), 012049.

3-3D simulation of coaxial carbon nanotube field effect transistor, Dinh Sy Hien, Thi Tran Anh Tuan, Nguyen Thi Luong , Dinh Viet Nga, Journal of Physics. Conference Series, 187, UK, 2009, 012061.

4- Linear Approximation and Asymptotic Expansion of Solutions in many small parameters, Le Phuong Ngoc, Cao Huu Hoa, Nguyen Thanh Long, Vietnam Journal of Mathematics 43(2), 2015

6-On a system of nonlinear wave equations associated with the helical flows of Maxwell fluid, Truong Xuan Le, Le Thi Phuong Ngoc, Cao Huu Hoa, Nguyen Thanh Long, Nonlinear Analysis Real World Applications12 ,2011, Impact Factor (IF): 2.52

7-Schottky barrier characteristics of Pt contacts to all sputtering to all sputtering-made n-type GaN and MOS diodes, Thi Tran Anh Tuan, Dong-Hau Kuo, Cheng-Che Li, Wei-Chun Yen, Journal of Materials Science: Materials Science in Electronic, 25, 2014, Impact Factor (IF): 1.96.

8- Existence, blow-up, and exponential decay estimates for a system of semilinear wave equations associated with the helicalflows of Maxwell fluid , Le Thi Phuong Ngoc, Cao Huu Hoa, Nguyen Thanh Long, Mathematical Methods in the Applied Sciences,12, 2015, Impact Factor (IF):0.92

9/Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes, Thi Tran Anh Tuan, Dong-Hau Kuo, Materials Science in Semiconductor processing, 30 (2015), Impact Factor (IF):1.76.

10-Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20 V, Thi Tran Anh Tuan, Dong-Hau Kuo, Materials Science in Semiconductor Processing, 32 (2015), Impact Factor (IF): 1.76.

11-Electrical and structural properties of Mg-doped InxGa1−xN (x ≤ 0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering, Thi Tran Anh Tuan, Dong-Hau Kuo, Cheng-Che Li, Wei-Chun Yen, Materials Science and Engineering B, 193, 2015, Impact Factor (IF) 2.12.

12-Effects of Mg doping on the performance of InGaN Films made by reactive sputtering, Dong-Hau Kuo, Thi Tran Anh Tuan, Cheng-Che Li, Wei-Chun Yen, Journal of Electronic Materials, 44 (2015), Impact Factor (IF): 1.8.

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